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mrf8s9260hr3 mrf8s9260hsr3 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma and multicarrier gsm base station applications with frequencies from 865 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 1700 ma, p out = 75 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 920 mhz 18.8 36.0 6.3 --39.5 940 mhz 18.7 37.0 6.2 --38.6 960 mhz 18.6 38.5 5.9 --37.1 ? capable of handling 7:1 vswr, @ 32 vdc, 940 mhz, 380 watts cw (1) output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point ? 260 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature t c 150 ? c operating junction temperature (2,3) t j 225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 280 1.5 w w/ ? c table 2. thermal characteristics characteristic symbol value (3,4) unit thermal resistance, junction to case case temperature 80 ? c, 75 w cw, 28 vdc, i dq = 1800 ma case temperature 80 ? c, 265 w cw, 28 vdc, i dq = 1100 ma r ? jc 0.37 0.31 ? c/w 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 2. continuous use at maximum temperature will affect mttf. 3. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 4. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s9260h rev. 1, 2/2012 freescale semiconductor technical data 920--960 mhz, 75 w avg., 28 v single w--cdma lateral n--channel rf power mosfets mrf8s9260hr3 mrf8s9260hsr3 case 465c--03 ni--880s mrf8s9260hsr3 case 465b--04 ni--880 mrf8s9260hr3 ? freescale semiconductor, inc., 2009, 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. mrf8s9260hr3 mrf8s9260hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 400 ? adc) v gs(th) 1.5 2.3 3 vdc gate quiescent voltage (v dd =28vdc,i d = 1700 madc, measured in functional test) v gs(q) 2.4 3.1 3.9 vdc drain--source on--voltage (v gs =10vdc,i d =4.4adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1700 ma, p out = 75 w avg., f = 960 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 17.5 18.6 20.0 db drain efficiency ? d 36.0 38.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.5 5.9 ? db adjacent channel power ratio acpr ? --37.1 --35.0 dbc input return loss irl ? -- 1 4 -- 9 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1700 ma, p out =75wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. frequency g ps (db) ? d (%) output par (db) acpr (db) irl (db) 920 mhz 18.8 36.0 6.3 --39.5 -- 1 6 940 mhz 18.7 37.0 6.2 --38.6 -- 1 8 960 mhz 18.6 38.5 5.9 --37.1 -- 1 4 1. part internally matched both on input and output. (continued)
mrf8s9260hr3 mrf8s9260hsr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1700 ma, 920--960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 260 ? w imd symmetry @ 130 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 10 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 50 ? mhz gain flatness in 40 mhz bandwidth @ p out =75wavg. g f ? 0.2 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.024 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) (1) ? p1db ? 0.0075 ? db/ ? c 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. mrf8s9260hr3 mrf8s9260hsr3 figure 1. mrf8s9260hr3(hsr3) t est circuit component layout *c16 is mounted vertically. c21 c19 c17 c15 c14 c13 c12 c11 c16* c18 c20 c10 r2 c8 c7 r1 c1 c2 c3 c4 c5 c6 c9 cut out area mrf8s9260h rev. 1 table 5. mrf8s9260hr3(hsr3) test circ uit component designations and values part description part number manufacturer c1, c6, c9, c12, c16 36 pf chip capacitors atc100b360jt500xt atc c2 0.4 pf chip capacitor atc100b0r4bt500xt atc c3 4.7 pf chip capacitor atc100b4r7bt500xt atc c4, c5 8.2 pf chip capacitors atc100b8r2bt500xt atc c7 4.7 ? f, 50 v chip capacitor c4532x5r1h475mt tdk c8, c13, c14, c19, c20 10 ? f, 50 v chip capacitors c5750x5r1h106mt tdk c10, c11 5.6 pf chip capacitors atc100b5r6bt500xt atc c15, c21 470 ? f, 63 v electrolytic capacitors 477kxm063m illinois capacitor c17 4.3 pf chip capacitor atc100b4r3bt500xt atc c18 0.8 pf chip capacitor atc100b0r8bt500xt atc r1 10 ? , 1/4 w chip resistor crcw120610r0jkea vishay r2 0 ? , 3.5 a chip resistor crcw12060000z0ea vishay pcb 0.030 ? , ? r =3.5 rf--35 taconic
mrf8s9260hr3 mrf8s9260hsr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 900 f, frequency (mhz) figure 2. output peak--to--average ratio compression (parc) broadband performance @ p out = 75 watts avg. -- 11 -- 1 5 16 21 -- 4 3 42 40 38 -- 3 5 ? d , drain efficiency (%) g ps , power gain (db) 20.5 20 19 910 920 930 940 950 960 970 980 -- 3 3 -- 1 9 parc (db) -- 2 0 -- 2 . 5 acpr (dbc) figure 3. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im5--u im5--l im7--l im7--u v dd =28vdc,p out = 250 w (pep), i dq = 1700 ma two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz figure 4. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 35 60 160 0 60 50 40 30 20 10 ? d ? drain efficiency (%) -- 1 d b = 6 4 w ? d acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 21 g ps , power gain (db) 20 18 16 v dd =28vdc,i dq = 1700 ma, f = 940 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obability on ccdf -- 2 d b = 8 8 w --3 db = 122 w -- 9 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0. 01% probab ility on ccdf 85 110 acpr 135 g ps parc 16.5 17 17.5 18 18.5 19.5 36 34 -- 3 7 -- 3 9 -- 4 1 -- 1 3 -- 1 7 -- 1 . 5 -- 1 -- 0 . 5 v dd =28vdc,p out =75w(avg.) i dq = 1700 ma, single--carrier w--cdma 19 17 15 g ps ? d im3--l irl parc acpr
6 rf device data freescale semiconductor, inc. mrf8s9260hr3 mrf8s9260hsr3 typical characteristics 1 acpr p out , output power (watts) avg. figure 5. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 2 5 14 20 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 10 100 300 10 -- 5 0 acpr (dbc) 19 18 -- 2 0 -- 3 0 figure 6. broadband frequency response 0 24 600 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1700 ma 12 8 700 gain (db) 20 800 900 1000 1100 1200 irl -- 1 8 0 -- 3 -- 6 -- 9 -- 1 2 irl (db) -- 1 5 17 16 15 -- 4 5 -- 4 0 -- 3 5 920 mhz 960 mhz 920 mhz 4 16 g ps 940 mhz 960 mhz v dd =28vdc,i dq = 1700 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf 960 mhz 940 mhz 920 mhz 940 mhz ? d gain w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 7. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8-- 3 . 6-- 5 . 4 -- 9 9 f, frequency (mhz) figure 8. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
mrf8s9260hr3 mrf8s9260hsr3 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dq = 1700 ma, p out =75wavg. f mhz z source ? z load ? 820 2.25 -- j2.59 1.93 -- j1.63 840 2.21 -- j2.51 1.91 -- j1.45 860 2.16 -- j2.46 1.90 -- j1.28 880 2.11 -- j2.40 1.90 -- j1.14 900 1.98 -- j2.37 1.91 -- j1.02 920 1.87 -- j2.29 1.90 -- j0.91 940 1.75 -- j2.23 1.89 -- j0.83 960 1.61 -- j2.14 1.87 -- j0.76 980 1.46 -- j2.03 1.84 -- j0.69 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor, inc. mrf8s9260hr3 mrf8s9260hsr3 alternative peak tune load pull characteristics 40 p in , input power (dbm) v dd =28vdc,i dq = 1700 ma, pulsed cw, 10 ? sec(on), 10% duty cycle 56 54 52 41 57 55 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 53 58 60 393837 33 44 3635 59 51 50 34 42 43 940 mhz ideal actual 920 mhz 960 mhz 940 mhz 960 mhz 920 mhz 61 f (mhz) p1db p3db watts dbm watts dbm 920 363 55.6 447 56.5 940 363 55.6 417 56.2 960 363 55.6 437 56.4 test impedances per compression level f (mhz) z source ? z load ? 920 p1db 0.94 -- j2.68 2.19 -- j2.10 940 p1db 1.18 -- j2.65 2.18 -- j2.52 960 p1db 1.24 -- j3.10 2.72 -- j2.11 figure 10. pulsed cw output power versus input power @ 28 v
mrf8s9260hr3 mrf8s9260hsr3 9 rf device data freescale semiconductor, inc. package dimensions
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mrf8s9260hr3 mrf8s9260hsr3 11 rf device data freescale semiconductor, inc.
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mrf8s9260hr3 mrf8s9260hsr3 13 rf device data freescale semiconductor, inc. product documentation, tools and software refer to the following documents, tools and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 dec. 2009 ? initial release of data sheet 1 feb. 2012 ? table 3, esd protection characteristics, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 2. ? replaced case outline 465b--03, issue d, with 465b--04, issue f, p. 1, 9--10. deleted style 1 pin note on sheet 2. on sheet 2, changed dimension b in mm from 13. 6--13.8 to 13.59--13.84, changed dimension h in mm from 1.45--1.7 to 1.45--1.70, changed dimension k in mm from 4.44--5.21 to 4.45--5.21, changed dimension m in mm from 22.15--22.55 to 22.15--22.56, changed dimension n in mm from 19.3--22.6 to 22.12--22.58, changed dimension q in mm from 3--3.51 to 3.00--3.51, changed dimension r and s in mm from 13.1--13.3 to 13.08--13.34. ? replaced case outline 465c--02, issue d, with 465c--03, issue e, p. 1, 11--12. deleted style 1 pin note on sheet 2. on sheet 2, changed dimension b in mm from 13. 6--13.8 to 13.59--13.84, changed dimension h in mm from 1.45--1.7 to 1.45--1.70, changed dimension m in mm from 22.15--22.55 to 22.15--22.56, changed dimension n in mm from 19.3--22.6 to 22.12--22.58, changed dimension r and s in mm from 13.1--13.3 to 13.08--13.34.
14 rf device data freescale semiconductor, inc. mrf8s9260hr3 mrf8s9260hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009, 2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8s9260h rev. 1, 2/2012

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